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| to-220f plastic-encapsulate diodes MBR3060FCT schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 60 v v r(rms) rms reverse voltage 42 v i o average rectified output current 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 200 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage v (br) i r =1ma 60 v reverse current i r v r =60v 0.2 ma v f1 i f =15a 0.8 v forward voltage v f2 * i f =30a 0.95 v typical total capacitance c tot * v r =4v,f=1mhz 400 pf *pulse test: pulse width 300 s, duty cycle 2.0%. to-220f 1. anode 2. cathode 3. a node 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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